IndiumV3, Main, Repository, bibRecord, 000505

Sputtered ITO for application in thin-film silicon solar cells: Relationship between structural and electrical properties

Identifieur interne : 000505 ( Main/Repository ); précédent : 000504; suivant : 000506

Sputtered ITO for application in thin-film silicon solar cells: Relationship between structural and electrical properties

Auteurs : RBID : Pascal:13-0188484

Descripteurs français

Pascal (Inist)
- Couche mince, Cellule solaire silicium, Composé de métal de transition, Conductivité électrique, Croissance film, Pulvérisation cathodique, Magnétron, Argon, Matériau granulaire, Structure surface, Mobilité Hall, Microstructure, Silicium, Cellule solaire, Couche ITO, Si:H, 8460J, 7361, 6855J.

English descriptors

KwdEn :
- Argon, Cathodic sputtering, Electrical conductivity, Film growth, Granular material, Hall mobility, ITO layers, Magnetron, Microstructure, Silicon, Silicon solar cells, Solar cell, Surface structure, Thin film, Transition element compounds.

Abstract

Indium tin oxide (ITO) thin films for application in thin-film silicon solar cells with superior electrical and optical properties (resistivity ranging from 1.4 to 8.4 x 10^-4 Ω cm; transparency of >80%) have been investigated. ITO layers were deposited by radio-frequency (RF) magnetron sputtering process at different argon gas pressures and substrate temperatures ranging from room temperature to 280°C. The main goal was to identify the relationship between structural and electrical properties. Generally, ITO layers were rather smooth with granular topography; electro-optically superior layers exhibited substantially different surface morphology of large, well-organized domain formations. Hall mobility of remarkably high value of 49 cm²/V s (resistivity of 2.6 x 10^-4 Ω cm) was achieved for the ITO layers, which were deposited at surprisingly low temperature of 125 °C. ITO process has been successfully applied, even at room temperature, to fabricate front contacts for microcrystalline silicon solar cells, exhibiting excellent performance on both rigid and flexible substrates.

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Pascal:13-0188484

Le document en format XML

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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovicova 3</s1>
<s2>812 19 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
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<author><name sortKey="Hotovy, I" uniqKey="Hotovy I">I. Hotovy</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovicova 3</s1>
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<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>8 aut.</sZ>
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<author><name sortKey="Kovac, J" uniqKey="Kovac J">J. Kovac</name>
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<title level="j" type="main">Applied surface science</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Argon</term>
<term>Cathodic sputtering</term>
<term>Electrical conductivity</term>
<term>Film growth</term>
<term>Granular material</term>
<term>Hall mobility</term>
<term>ITO layers</term>
<term>Magnetron</term>
<term>Microstructure</term>
<term>Silicon</term>
<term>Silicon solar cells</term>
<term>Solar cell</term>
<term>Surface structure</term>
<term>Thin film</term>
<term>Transition element compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term>
<term>Cellule solaire silicium</term>
<term>Composé de métal de transition</term>
<term>Conductivité électrique</term>
<term>Croissance film</term>
<term>Pulvérisation cathodique</term>
<term>Magnétron</term>
<term>Argon</term>
<term>Matériau granulaire</term>
<term>Structure surface</term>
<term>Mobilité Hall</term>
<term>Microstructure</term>
<term>Silicium</term>
<term>Cellule solaire</term>
<term>Couche ITO</term>
<term>Si:H</term>
<term>8460J</term>
<term>7361</term>
<term>6855J</term>
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<front><div type="abstract" xml:lang="en">Indium tin oxide (ITO) thin films for application in thin-film silicon solar cells with superior electrical and optical properties (resistivity ranging from 1.4 to 8.4 x 10<sup>-4</sup>
 Ω cm; transparency of >80%) have been investigated. ITO layers were deposited by radio-frequency (RF) magnetron sputtering process at different argon gas pressures and substrate temperatures ranging from room temperature to 280°C. The main goal was to identify the relationship between structural and electrical properties. Generally, ITO layers were rather smooth with granular topography; electro-optically superior layers exhibited substantially different surface morphology of large, well-organized domain formations. Hall mobility of remarkably high value of 49 cm<sup>2</sup>
/V s (resistivity of 2.6 x 10<sup>-4</sup>
 Ω cm) was achieved for the ITO layers, which were deposited at surprisingly low temperature of 125 °C. ITO process has been successfully applied, even at room temperature, to fabricate front contacts for microcrystalline silicon solar cells, exhibiting excellent performance on both rigid and flexible substrates.</div>
</front>
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<fA11 i1="01" i2="1"><s1>HOTOVY (J.)</s1>
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<fA11 i1="02" i2="1"><s1>HÜPKES (J.)</s1>
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<fA11 i1="03" i2="1"><s1>BÖTTLER (W.)</s1>
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<fA11 i1="09" i2="1"><s1>KOVAC (J.)</s1>
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<fA14 i1="01"><s1>IEK5 - Photovoltaik, Forschungszentrum Juelich GmbH</s1>
<s2>52425 Juelich</s2>
<s3>DEU</s3>
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<sZ>2 aut.</sZ>
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<sZ>4 aut.</sZ>
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<fA14 i1="02"><s1>Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovicova 3</s1>
<s2>812 19 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
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<fA14 i1="03"><s1>Department of Physics, University of Minho</s1>
<s2>4800-058 Guimarães</s2>
<s3>PRT</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Centre of Micro- and Nanotechnologies, Ilmenau University of Technology, Gustav-Kirchhoff-Str. 7</s1>
<s2>98693 Ilmenau</s2>
<s3>DEU</s3>
<sZ>5 aut.</sZ>
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 Ω cm; transparency of >80%) have been investigated. ITO layers were deposited by radio-frequency (RF) magnetron sputtering process at different argon gas pressures and substrate temperatures ranging from room temperature to 280°C. The main goal was to identify the relationship between structural and electrical properties. Generally, ITO layers were rather smooth with granular topography; electro-optically superior layers exhibited substantially different surface morphology of large, well-organized domain formations. Hall mobility of remarkably high value of 49 cm<sup>2</sup>
/V s (resistivity of 2.6 x 10<sup>-4</sup>
 Ω cm) was achieved for the ITO layers, which were deposited at surprisingly low temperature of 125 °C. ITO process has been successfully applied, even at room temperature, to fabricate front contacts for microcrystalline silicon solar cells, exhibiting excellent performance on both rigid and flexible substrates.</s0>
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<fC03 i1="01" i2="X" l="FRE"><s0>Couche mince</s0>
<s5>01</s5>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<fC03 i1="08" i2="X" l="FRE"><s0>Argon</s0>
<s2>NC</s2>
<s5>10</s5>
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<fC03 i1="08" i2="X" l="ENG"><s0>Argon</s0>
<s2>NC</s2>
<s5>10</s5>
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<fC03 i1="08" i2="X" l="SPA"><s0>Argón</s0>
<s2>NC</s2>
<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
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<fC03 i1="09" i2="X" l="SPA"><s0>Material granular</s0>
<s5>11</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Hall mobility</s0>
<s5>14</s5>
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<fC03 i1="11" i2="X" l="SPA"><s0>Movilidad Hall</s0>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Microstructure</s0>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Microstructure</s0>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Microestructura</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>16</s5>
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<s2>NC</s2>
<s5>16</s5>
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<s2>NC</s2>
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<s5>17</s5>
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<fC03 i1="15" i2="3" l="FRE"><s0>Couche ITO</s0>
<s5>22</s5>
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<fC03 i1="15" i2="3" l="ENG"><s0>ITO layers</s0>
<s5>22</s5>
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<s4>INC</s4>
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   |texte=   Sputtered ITO for application in thin-film silicon solar cells: Relationship between structural and electrical properties
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Sputtered ITO for application in thin-film silicon solar cells: Relationship between structural and electrical properties

Sputtered ITO for application in thin-film silicon solar cells: Relationship between structural and electrical properties

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